lattice mismatch造句
例句与造句
- Calculation of the lattice mismatch between semiconductor epitaxy and substrate
半导体外延层晶格失配度的计算 - The different definitions of lattice mismatch are compared with each other
摘要比较了晶格失配度的各种定义，建议统一使用同一定义。 - The effect of lattice mismatch on the nucleation process of heteroepitaxial growth of ultrathin film
晶格失配对异质外延超薄膜生长中成核特性的影响 - The successful preparation of zncdse qd on znse provides a way for the fabrication of qd in s - k mode with relative small lattice mismatch
该方法为较小失配下s - k模式量子点的制备提供了途径。 - However , the simulation results of the superlattice with 4 % lattice mismatch show that the thermal conductivity increases monotonically with the period length
而对于具有4 %晶格失配的超晶格模拟结果却表明，超晶格导热系数随周期长度的增大而单调上升。 - It's difficult to find lattice mismatch in a sentence. 用lattice mismatch造句挺难的
- These results indicate that lattice mismatch is the main reason why minimum thermal conductivity has not been observed in a large number of experimental studies
这一研究结果表明，材料的晶格失配是大多数实验研究中没有发现超晶格最小导热系数的主要原因。 - This kind of technology provides an effective way to solve a troublesome lattice mismatch problem in the heteroepitaxy , which has the capability for improving device structure and characteristics
这种技术解决了外延生长难以解决的晶格失配问题，为改善器件结构及性能提供了巨大的潜力。 - The calculation way of the lattice mismatch through a new simpilied model between semiconductor epitaxy and substrate are analysed , and the way of determine the lattice mismatch in xrd are also discussed
结果表明，正三角形晶格和长方形晶格匹配，长方形晶格的宽列原子的匹配具有优先性，不受长列原子匹配的影响。 - The xrd results show that the sputtered lcmo film grains are grown epitaxially , when the lattice mismatch between film and substrate is small . the lcmo thin films grown on sto substrates show an in - plane tensile stress
Xrd的研究结果表明,当基片与lcmo薄膜间的晶格失配度较小时,薄膜和基片具有一致的晶格取向,薄膜具有较好的外延结构特征。 - And , the sbn films were found more and more ( 001 ) preferential orientated with the increasement of film thickness and it was attributed to the lower layer acting as the buffer one to improve the lattice mismatch between the sbn film and the substrate
而且，随着膜厚的增加，处于底层的膜层起到缓冲层的作用，逐渐改善着薄膜与衬底之间的晶格失配，从而使得sbn薄膜在( 001 )方向的优先取向性越来越好。 - Due to the lattice mismatch and thermal mismatch between the thin film and the substrate and the process from high temperature to low temperature during the preparation of the thin films , residual stress will be inevitably induced between the thin film and the substrate
然而铁电薄膜在制备过程中会经历一个由高温到低温的过程,薄膜与基片之间存在着晶格失配、热失配等,薄膜中必然存在一定的残余应力。 - The anisotropy of four - fold symmetry indicates the appearance of cubic anisotropy . ( 4 ) the in - plane unixial anisotropy existed in films originates probably from magneto - elastic interaction due to the anisotropic strain caused by lattice mismatch at the interface
( 3 )薄膜中存在的面内单轴各向异性可能来源于磁弹性相互作用，这是由于薄膜在生长过程中，与衬底的品格错配而产生的应力各向异性导致的。 - On the other hand , if the introduction of the residual stress is fully understood , one can make good use of the strain induced by the lattice mismatch between the film and the substrate to modulate and improve the properties of the ferroelectric thin films
另一方面,如果人们能够对薄膜应力的产生机制有较深刻全面的理解,就可能通过适当的制备手段来利用薄膜与基片间的应变效应来调制和提高薄膜的性能。 - After a detailed investigation on the p - fesi2 / si orientation relationships by cem , we point out that the existence of several competing and incoherent rientation relationships , twining , and lattice mismatch are responsible for the ifficulty in obtaining high - quality p - fesi2 films
因此复杂的取向关系是p干。薄膜质量差的本质原因之一。为了更深入地了解p干st取向关系，本文利用晶界取向理论对其进行了计算，结果表明卜fest 。 - The investigation of structure by x - ray diffraction shows that crystal parameters changes clearly when percenting ca and la into pbtio _ 3 , it was caused by the ca ion and la ion replaced the pb ion of a position in perovskite compound , that bring lattice mismatch and asymmetrical replace
在pbtio _ 3中掺入la和ca可以有效改变薄膜的晶格常数,这是因为在abo _ 3型化合物中,钙离子、镧离子取代了a位的铅离子,造成晶格失配和不对称取代。
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